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| NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: PZTA 92, PZTA 93 (PNP) q Type PZTA 42 PZTA 43 Marking PZTA 42 PZTA 43 Ordering Code (tape and reel) Q62702-Z2035 Q62702-Z2036 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS = 124 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol PZTA 42 VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg 300 300 Values PZTA 43 200 200 6 500 100 1.5 150 Unit V mA W C - 65 ... + 150 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 42 PZTA 43 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 42 PZTA 43 Collector-base breakdown voltage IC = 100 A, IB = 0 PZTA 42 PZTA 43 Emitter-base breakdown voltage IE = 100 A, IC = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 C VCB = 160 V, TA = 150 C Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA PZTA 42 PZTA 43 Base-emitter saturation voltage IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz PZTA 42 PZTA 43 fT Cobo - - - - 3 4 - 70 - MHz pF PZTA 42 PZTA 43 PZTA 42 PZTA 43 IEB0 hFE 25 40 40 VCEsat - - VBEsat - - - - 0.5 0.4 0.9 - - - - - - V V(BR)CE0 300 200 V(BR)CB0 300 200 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 6 nA - 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 PZTA 42 PZTA 43 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 3 PZTA 42 PZTA 43 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 4 |
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